Samsung 870 QVO 4000GB

The Samsung 870 QVO 4TB represents the second generation of Samsung’s consumer QLC offerings, built around the proprietary Samsung MKX controller—the same silicon utilized in the TLC-based 870 EVO. This architecture is supported by 4GB of LPDDR4 DRAM for mapping tables and Samsung’s high-density V-NAND 4-bit MLC (QLC) flash memory. The drive is engineered to maximize storage density within the legacy SATA III interface, utilizing Intelligent TurboWrite (SLC caching) to mask the native write latency inherent to Quad-Level Cell media. The 4TB model includes an SLC cache (up to 78GB dynamic + 6GB static); sustained writes that exhaust this buffer see write speeds fall from 530 MB/s to approximately 160 MB/s, producing a pronounced write cliff. Consequently, the drive is categorized as a high-capacity storage volume (WORM – Write Once, Read Many) rather than a candidate for heavy mixed-use workloads or operating systems.

Key Specifications

• Interface: SATA III (6 Gbps)
• Max Sequential Speeds: 560 MB/s Read / 530 MB/s Write
• Controller: Samsung MKX
• NAND Flash: Samsung V-NAND 4-bit MLC (QLC)
• DRAM Cache: 4GB LPDDR4
• Endurance Rating: 1,440 TBW
• Encryption Support: AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted Drive)

Hardware Alternatives

• Samsung 870 EVO 4000GB: shares the same MKX controller architecture but uses 3-bit MLC (TLC) NAND, providing higher write endurance and sustained write speeds that do not suffer the drastic throttling seen in the QVO series.
• Crucial MX500 4000GB: utilizes Micron 3D TLC NAND controlled by a Silicon Motion chipset; maintains TLC-level endurance and performance consistency, making it a different class of drive despite the shared SATA form factor.
• Western Digital Blue SA510 4000GB: a direct performance competitor in terms of interface saturation; similar to the MX500, it uses TLC NAND and offers a more stable write performance profile during transfers that exceed SLC cache capacity compared to the QLC-based 870 QVO.